Strongly anisotropic ballistic magnetoresistance in compact three-dimensional semiconducting nanoarchitectures
張景皓3,1*, Jeroen van den Brink,1,2, Carmine Ortix1
1Institute for Theoretical Solid State Physics, IFW Dresden, Dresden, Germany
2Department of Physics, Technical University Dresden, Dresden, Germany
3Department of Physics, National Tsing Hua University, Hsinchu, Taiwan
* presenting author:張景皓, email:cutygo@gmail.com
We establish theoretically that in non-magnetic semiconducting bilayer or multilayer thin film
systems rolled-up into compact quasi-one-dimensional nanoarchitectures, the ballistic magnetoresistance is very anisotropic: conductances depend strongly on the direction of an externally applied magnetic field. This phenomenon originates from the curved open geometry of rolled-up nanotubes, which leads to a tunability of the number of one-dimensional magnetic subbands crossing the Fermi energy. The experimental significance of this phenomenon is illustrated by a sizable anisotropy that scales with the inverse of the winding number, and persists up to a critical temperature that can be strongly enhanced by increasing the strength of the external magnetic field or the characteristic radius of curvature, and can reach room temperature.


Keywords: Magnetoresistance, Quantum Hall effect, Quantum conductance, Ballistic transport, Flexible electronics