The influences of N 2p vacancy on the electronic structure of p-type ZnO thin films studied by x-ray spectroscopy and photoemission spectroscopy
Jau-Wern Chiou1*, Chia-Lung Li1, Jui-Fen Chien2, Miin-Jang Chen2
1Department of Applied Physics, National University of Kaohsiung, Kaohsiung, Taiwan
2Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan
* presenting author:邱昭文, email:jwchiou@nuk.edu.tw
The Nitrogen-doped ZnO (ZnO:N) thin films were prepared by remote plasma in situ atomic layer deposition (ALD) method. We investigate how nitrogen doping percentage affects the electronic structure of ZnO thin films by x-ray absorption near-edge structure (XANES) and x-ray photoelectron spectroscopy (XPS). It reveals that the O 2p-Zn 3d hybridization enhanced with the increasing of nitrogen doping percentage while the O 2p-Zn 4sp hybridization exhibits no significant variation. Photoluminescence (PL) and x-ray diffraction (XRD) measurements have also been used to discuss the atomic structure and photoluminescence properties of ZnO thin films. On the nitrogen related defects, the formation of the occupation of oxygen sites with nitrogen doping percentage is the main factor to affect the atomic and electronic structures of ZnO:N thin films.


Keywords: Nitrogen-doped ZnO, atomic layer deposition, x-ray spectroscopy, x-ray photoemission spectroscopy