Thermal Reduction and Chemical Modification on the Photoluminescence and Electronic Structure of Graphene Oxide
ChengHao Chuang1*, Y.-F. Wang1, Y.-C. Shao1, Y.-C. Yeh2, C.-W. Chen2, D.-Y. Wang2, J. W. Chiou3, S. C. Ray4, W. F. Pong1, L. Zhang5, J. F. Zhu5, S. Sharma6, P. Papakonstantinou6, J. H. Guo7
1Department of Physics, Tamkang University, Taiwan
2Department of Material Science and Engineering, National Taiwan University, Taiwan
3Department of Applied Physics, National University of Kaohsiung, Taiwan
4Department of Physics, Science Campus University of South Africa, South Africa
5National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, China
6Engineering Research Institute, University of Ulster, United Kingdom
7Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, United States of America
* presenting author:莊程豪,
Synchrotron-related technologies provide the comprehensive study about the electronic and chemical structure owing to the features of high brightness/resolution, angle-resolved measurement, and element selectivity. Since the soft-X-ray absorption profile reveals the localized unoccupied electronic state, it is in great demand that the occupied electronic structure is possibly solved in the aspect of the electron/hole transportation and chemical construction in the vicinity of Fermi level, which is cross-linked to the photoluminescence process. Apparently, soft X-ray emission (SXE) spectroscopy opens the door not only for understanding the element-related valence band but also its dispersive band structure, while the energy and momentum conservations are used to solve a close relationship between excitation and radiative decay processes. The main one of objectives of using the resonant inelastic X-ray scattering (RIXS) is to investigate the oxidation and nitrogenation degree of graphene oxide. The extrinsic and intrinsic doping introduced into the band structure of novel materials is discussed for its chemical and structural modification by X-ray absorption and SXE. It occurs the incoming vacancy site generated by the leave of oxygen group and creates the binding possibility for nitrogen bonding. Coincident nitrogen doping and oxygen reduction is co-existed in graphene oxide for turning chemical characterization in the applications of semiconducting graphene oxide.

Keywords: graphene oxide, Resonant Inelastic X-ray Scattering