A Light Source for EUV Lithography
Alex Chao1*
1SLAC National Accelerator Laboratory, Stanford University, Stanford, United States of America
* presenting author:Alex Chao, email:achao@slac.stanford.edu
The semiconductor industry has been successful in upholding the Moore’s law of doubling the number of transistors every two years since the late 1960s. The lithography tools that allowed this amazing success most recently had utilized the deep ultraviolet (DUV) light. To continue this success, the next step is envisioned to require extreme ultraviolet (EUV) light with shorter wavelength. It has become an urgent matter to provide EUV tools with high power at a kilowatt level to fulfill the envisioned industry needs. A recently proposed technique in storage ring accelerators is applied to this purpose. The technique is based on a newly invented steady-state microbunching (SSMB) mechanism [1]. At a minimum cost, a storage ring of 1-3 GeV can be converted into a kilowatt EUV tool by adding two appropriate undulator magnets plus one moderate-strength UV seed laser. Multiple tools per storage ring is optional.

[1] Daniel F. Ratner and Alexander W. Chao, Phys. Rev. Lett. 105, 154801 (2010).


Keywords: lithography, EUV radiation, storage ring, steady-state microbunching