Mechanically engineered g-factor of hole in droplet epitaxial quantum dots
Ming-Fan Wu1*, Yo-Nian Wu1, Shun-Jen Cheng1
1Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan
* presenting author:Ming-Fan Wu, email:adiemuswu@gmail.com
We theoretically investigate the anisotropic g-factor tensors of single holes confined in droplet epitaxial (DE) GaAs/AlGaAs quantum dots (QDs) under uniaxial stress control. Within the four-band Luttinger-Kohn k.p model, the generalized formalisms of strain-dependent g-factors for a QD-confining hole are analytically derived and numerically confirmed. We demonstrate that by applying an external uniaxial stress one can significantly change both the anisotropy and magnitude of the hole g-factor. In addition, we show that a tensile stress enables the high electrical tunability of g-factor, which is a crucial prerequisite for g-tensor modulation resonance spin manipulation schemes.


Keywords: quantum dot, g-factor