In situ Tuning and Probing the Ambipolar Field Effect on Multiwall Carbon Nanotubes
陳莉穎1*, 陳郁君1, 張嘉升1
1物理所, 中央研究院, Taiwan
* presenting author:陳莉穎, email:lychen@phys.sinica.edu.tw
We report a method of fabricating ultra-clean and hysteresis-free multiwall carbon nanotube field-effect transistors (CNFETs) inside the ultra-high vacuum transmission electron microscope (TEM) equipped with a movable gold tip as a local gate. By tailoring the shell structure of the nanotube and varying the drain-source voltage, we can tune the electronic characteristic of a multiwall CNFET in situ. We have also found that the Schottky barriers of a multiwall CNFET are generated within the nanotube, but not at the nanotube/electrode contacts, and the barrier height has been derived. We have subsequently demonstrated the ambipolar characteristics of the CNFET with concurrent high-resolution imaging and local gating.


Keywords: CNFET, TEM