A Strong Blocking Layer of Graphene for Copper Diffusion Barrier
蘇雅雯1*, 劉智華2, 吳憲昌2, 林宏一3, 陳啟東4
1國家奈米元件實驗室, 國家實驗研究院, 新竹, Taiwan
2物理所, 彰化師範大學, 彰化, Taiwan
3材料所, 台南大學, 台南, Taiwan
4物理研究所, 中央研究院, 台北, Taiwan
* presenting author:Yawen Su, email:yawensu@narlabs.org.tw
Graphene has attracted much interest because of its extraordinary electric and thermal conduction, mechanical strength and optical transparency and its potential applications in various fields, such as interconnect, flexible electronic, high frequency device, solar cell. Large area and high quality graphene has been synthesized by chemical vapor deposition (CVD) using copper and transition metals as catalyst. Notes that copper is nowadays being used as interconnect metal. High quality interconnect with high conductivity plays an crucial role in high speed operation of logic integrated circuits. However, downscaling of CMOS technology requires narrowing of copper interconnects, which brings about degraded quality of interconnects as well as decreased conductivity. In this work, we take advantage of the high conductivity graphene and we propose to hybrid graphene with copper for the use of interconnect. More specifically, copper is employed on the top of graphene nanoribbons. In this way, the conductance of nano copper interconnects can be improved while the impact to the fabrication process is minimized. Furthermore, the underneath graphene can serve as a barrier that block diffusion of copper into bottom dielectric layer.


Keywords: Graphene, Copper, Diffusion Barrier, Blocking Layer