Characterization of M-plane InGaN/GaN grown on γ-LiAlO₂ (100) misoriented 11° toward (011) by PA-MBE
林雨樵(Yu-Chiao Lin)1*, 羅奕凱(Ikai Lo)*1, 施政宏(Cheng-Hung Shih)1, 張惟翔(Zhang Wei Xiang)1, 周明奇(Ming-Chi Chou)2
1Physics, NSYSU, Kaohsiung, Taiwan
2Materials and Optoelectronic Science, NSYSU, Kaohsiung, Taiwan
* presenting author:林雨樵,
The non-polar InGaN/GaN quantum well is a potential candidate for high-efficient photoelectric devices. In this work, we analyzed the characteristics of M-plane InGaN/GaN quantum wells which were grown on misoriented LiAlO₂ (LAO) substrates by plasma-assisted molecular beam epitaxy (PAMBE). A series of samples were grown with different N/Ga flux ratios and growth temperatures to improve the optical quality. The crystal structure and optical property of samples were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscope (TEM) and polar-dependent photoluminescence (PL) measurements. The peak of 32.2° in the XRD measurement showed the [1-100] oriented (M-plane) for the GaN and the shoulder showed that there consisted of InGaN/GaN quantum wells.

Keywords: M-plane InGaN, misoriented, LAO, MBE