Growth and characterization of high-quality InN thin films on InGaN buffer layer by plasma-assisted molecular beam epitaxy
Chen-Chi Yang1*, Ikai Lo1, Cheng-Hung Shih1, Chia-Hsuan Hu1, Ying-Chieh Wang1, Yu-Chiao Lin1, Cheng-Da Tasi1, Shuo-Ting You1
1Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan
* presenting author:Chen-Chi Yang, email:d002030005@student.nsysu.edu.tw
Four InN samples were grown on 2-inch c-plane (0001) sapphire substrates with 4-μm-thick GaN template. These InN thin films were grown on InGaN buffer layer by low-temperature plasma-assisted molecular beam epitaxy (PAMBE) system.These samples were grown under varied temperatures of InGaN buffer layers: 500°C, 540°C, 570°C, and 600°C. The structure properties of these samples were analyzed by X-ray diffraction (XRD). The interference fringes of InN grown on the sample 1 (the growth temperature of InGaN buffer layer at 500°C) exhibit prominent oscillations, which indicates that the sample has a high quality and layer by layer epitaxial structure. The microstructure and surface morphology of samples were investigated by transmission electron microscopy (TEM), atomic force microscopy (AFM), and scanning electron microscopy (SEM) to confirm the high quality crystalline and smooth surface for the sample.


Keywords: InN, InGaN buffer, MBE