The growth of heteroepitaxial CuInSe₂on free-standing N-polar GaN
Cheng-Hung Shih1*, Ikai Lo2, Shuo-Ting You2, Cheng-Da Tsai2, Bae-Heng Tseng3, Yun-Feng Chen3, Chiao-Hsin Chen3, Chuo-Han Lee4, Wei-I Lee4, Gary Z.L. Hsu5
1Multidisciplinary Science Research Center, National Sun Yat-Sen University, Kaohsiung, Taiwan
2Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan
3Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan
4Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan
5United Crystal Corporation, United Crystal Corporation, Miaoli, Taiwan
* presenting author:施政宏, email:d9036806@student.nsysu.edu.tw
We report that chalcopyrite CuInSe₂thin films were grown on free-standing N-polar GaN (0001 ̅) by molecular beam epitaxy. X-ray diffraction showed that the CuInSe₂thin film was grown in (112) orientation, and its peak of rocking curve with full width at half maximum of about 897.8 arc-sec indicated the epitaxial growth of CuInSe₂(112) film on N-polar GaN. Microstructure analysis of the CuInSe₂showed that the large lattice mismatch (28.5%) between CuInSe₂and GaN is accommodated by domain matching, and no interface reaction occurs between CuInSe₂and GaN. Our experimental results show that GaN is stable for the epitaxial growth of CuInSe₂thin film, which exhibits a promising potential for optoelectronic applications.


Keywords: chalcopyrite, CuInSe2, GaN, molecular beam epitaxy, domain matching epitaxy