The temperature dependent dielectric properties of multiferroic o-TmMnO₃ (100) and (001) thin films
Yen-Fu Hsiao1*, Wei-Cheng Kuo1, Hung-Cheng Wu2, Hung-Duen Yang2, Chih-Wei Luo1, Kaung-Hsiung Wu1, Tzeng-Ming Uen1, Jiunn-Yuan Lin3, Jenh-Yih Juang1
1Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan
2Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan
3Institute of Physics, National Chiao Tung University, Hsinchu, Taiwan
* presenting author:蕭雁夫, email:scott010591@yahoo.com.tw
We report the dielectric constant difference, dielectric losses and magnetization response of o-TmMnO₃ thin films. The dielectric constant difference and dielectric loss show the Maxwell-Wagner effect dominated the dielectric response at high temperature 200 to 290 K. Below 50 K, conventional E-type multiferroic o-TmMnO₃ thin films show significant changing of dielectric properties around TN. With magnetic field applied, the dielectric losses exhibit intriguing transition which coincides with the E-type spin reordering transition temperature. Furthermore, dielectric losses also show another fascinating variation in the middle of sinusoidal spins and E-type transition temperature. Comparing the magnetization measurement of o-TmMnO₃ (100), we suggested a magnetic field induced transition involving to the o-TmMnO₃ thin films.


Keywords: Dielectric, Orthorhombic thulium manganite, Multiferroic