Influence of Al Doping on the Characteristics of ZnO nanowires fabricated by low temperature solution process
Jung-Hua Wu (吳榮華)1, San-Lin Young (楊尚霖)1*, Hone-Zern Chen (陳宏仁)1, Ming-Cheng Kao (高銘政)1, Po-Yen Chen (陳柏諺)2, Yao-Wei Yang (楊曜維)1, Sing-Yu Chen (陳星宇)1, Hao-Sin Lin (林皞昕)1
1Department of Electronic Engineering, Hsiuping University of Science and Technology, Taichung, Taiwan
2Department of Electrical Engineering, Hsiuping University of Science and Technology, Taichung, Taiwan
* presenting author:楊尚霖, email:slyoung@hust.edu.tw
ZnO and Zn0.98Al0.02O nanostructures have been fabricated on the silicon substrate by a solution method at low temperature (90℃). The nanowire arrays were prepared to study the substitution effect of Al for Zn on the structural, photoluminescent and magnetic properties. The Al-doped nanowires exhibited a c-axis (002) oriented wurtzite hexagonal structure as pure ZnO array. Photoluminescence spectrum showed a decrease of both the UV emission and visible emission peak intensities. The peak intensity of E2 high mode in the Raman spectra increases with the addition of Al-dopant indicating that Al-doped sample have less oxygen vacancies concentration than that of pure ZnO nanowires. The hysteresis loops show that the room temperature ferromagnetism deduces and the saturated magnetization decreases with the increase of the Al concentration for the Al-doped ZnO nanowires.


Keywords: AZO, Photoluminescence, Raman spectrum, Magnetization