1/f noise in single-crystalline RuO2 nanowires 葉勝玄 ^{1*}, 張文耀^{1}, 林志忠^{1,2}^{1}NCTU-RIKEN Joint Research Laboratory and Institute of Physics, National Chiao Tung University, Hsinchu, Taiwan^{2}Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan* presenting author:葉勝玄, email:yehshengshiuan@gmail.com We have measured the low frequency noise of single-crystal RuO2 nanowires with diameters of ~20 and ~90 nm. The magnitudes of low frequency noise have 1/f dependence, where f denotes the frequency. We found nanowires with higher resistivity possess higher noise magnitudes. At high T (100 K < T < 300 K), the noise is dominated by thermal-activated fluctuations of defects, while at low T (T < 100 K), the observed noise can be ascribed to originating from temporal universal conductance fluctuations. The energy distribution of defects in these nanowires is also determined from our noise measurements.
Keywords: nanowires, 1/f noise, defects, two-level systems, universal conductance fluctuations |