Fabrication and mechanisms of stretchable Organic Memory Device
Ying-Chih Lai1,2, Tzu-Yao Lin1*, Jian-Yu Chen1, Yi-Chuan Huang3, Tai-Yuan Lin3, Yang-Fang Chen1
1Department of Physics, National Taiwan University, Taipei, Taiwan
2Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan
3Institute of Optoelectronics Sciences, National Taiwan Ocean University, Taipei, Taiwan
* presenting author:林子堯, email:r02222044@ntu.edu.tw
A stretchable organic digital information storage device has been demonstrated, which enables to advance the development of future smart and digital stretchable electronic systems. The stretchable organic memory with a buckled structure was configured by the mechanical flexible and elastic graphene bottom electrode and polymer compound. The current-voltage curve of the buckled memory showed the electrical bistability with typical write-once-read-many-times (WORM) memory features and a high ON/OFF current ratio of ~105. Even under repetitive stretching, the stretchable organic memory exhibited excellent electrical switching functions and memory effects. We believe this the first proof-of-concept presentation of the stretchable organic nonvolatile memory may progress the development for information storage device in various stretchable electronic applications, such as stretchable display, wearable computer and artificial skin.


Keywords: organic memory, stretchable electronics, stretchable memory, resistance switching, transferable