InGaN/GaN nanostructure light emitting device
Shih-Pang Chang1, Yuh-Jen Cheng1*
1Research Center for Applied Sciences, Academia Sinica, Taipei, Taiwan
* presenting author:程育人, email:yjcheng@sinica.edu.tw
We report the fabrication and study of electrically driven InGaN/GaN multiple quantum well nanostructure light emitting devices. Conventional devices are often grown on c-plane sapphire substrates. There is an internal piezoelectric field in this plane that significantly limits the emission efficiency and wavelength tunability. We used nano fabrication and selective area growth to grow crystalline multiple quantum well nanostructure. The piezoelectric field in this structure is much reduced. The time resolved and temperature dependent photoluminescent study show significantly enhanced emission efficiency. Due to the low piezoelectric field, high In content InGaN/GaN multiple quantum wells can still maintain reasonable emission efficiency. We will report the demonstration of electrically driven green to amber color emission using this nanostructure.


Keywords: GaN, quantum well, nanopyramid