Quantum Interference and electron transport in CVD graphene nanoribbon
Jyun-Hong Chen1, Shi-Xian Guan1, Yuan-Liang Zhong1*, Lain-Jong Li2, Chii-Dong Chen3
1Department of Physics and Center for Nanotechnology, Chung Yuan Christian University, Chung Li, Taiwan
2Materials Science and Engineering, King Abdullah University of Science and Technology (KAUST), Saudi Arabia
3Institute of Physics, Academia Sinica, Taipei, Taiwan
* presenting author:陳俊宏, email:zack7302@gmail.com
We study the quantum interference and electron transport in suspended graphene nanoribbon. The graphene is grown on copper by chemical vapor deposition (CVD), and then transfer to SiO2/Si substrate. The width of graphene nanoribbon is defined by e-beam lithography and oxygen plasma etching techniques.
The wire width of graphene nanoribbon is from 50nm, 75nm and 245nm to 705nm for studying quantum interference and electron transport. The temperature dependence of resistivity is observed an enhance resistivity at low temperature, due to electron-electron interaction effect, with decreasing temperature. On the other hand, the weak localization and universal conductance fluctuations phenomenon are observed by measuring magnetoresistivity with the oscillation period e/h and e/2h. Furthermore, a single electron transport is observed in the smallest wire width 50nm.
Our results indicate electron transport in weak-disorder graphene nanoribbon from diffusion transport, or ballistic transport to single electron transport with decreasing wire width.


Keywords: Graphene nanoribbon, Quantum Interference, Weak localization, Universal conductance fluctuation, Electron transport