Electric and Magneto-transport Properties in Organic Spin Valves with a Self-Assembled Monolayers Spacer
Jhen-Yong Hong (洪振湧)1*, Shih-Hang Chang1, Kui-Hon Ou Yang1, Piin-Chen Yeh1, Hung-Wei Shiu2, Chia-Hao Chen2, Minn-Tsong Lin (林敏聰)1,3
1Physics, National Taiwan University, Taipei, Taiwan
2National Synchrotron Radiation Research Center, Hsinchu, Taiwan
3Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan
* presenting author:洪振湧, email:d93222006@ntu.edu.tw
We report the spin-dependent transport properties and IV hysteresis characteristics in molecular-level organic spin valves with a self-assembled monolayers (SAMs). X-ray photoelectron spectroscopy shows that 1, 4 benzenedimethanethiol (BDMT) forms ordered self-assembled monolayers with the phosphonic group coordinated to the ferromagnet surface. The magnetoresistive (MR) and I-V curves characterize the transport properties in these organic spin valves, showing that SAM-based organic spin valve exhibits both magnetoresistance and non-volatile resistive memory switching. The results reveal the possibilities of integrating SAMs into future multi-functional molecular-level organic spintronic devices.

Keywords: Organic Spintronics, Magnetoresistance, Self-Assembled Monolayers, X-ray Photoelectron Spectroscopy