Synthesis and Characterization of Indium Selenide
Ching Chen1*, Chun Hao Ma2, Ying Hao Chu1
1Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan
2Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan
* presenting author:陳凊, email:lkb2934@yahoo.com.tw
Indium selenide, as a group III-VI semiconductor, is attracted much attention recently, due to its high photoresponsivity, indicating in optoelectronic devices. However, there is no suitable process to fabricate this kind of material. Some conventional methods such as thermal evaporation, electro deposition, chemical bath deposition, and spray pyrolysis can grow this material, but it is hard to realize high quality indium selenide. Here, we are going to present a new method to synthesis high quality indium selenide. First, we grow high quality epitaxial indium oxide thin film on sapphire by pulsed laser deposition. After this, we use this epitaxial indium oxide thin film as a template, doing selenizaition process, to produce indium selenide. By precisely controlling the reaction process, a single phase high quality indium selenide can be fabricated. Characterizations of this material were done using different methods. In the part of structure, we used X-ray diffraction, atomic force microscope, Raman spectroscopy, and reflection high energy electron diffraction for analysis. Moreover, we did photoluminescence and optical absorption measurements to check its electric properties.


Keywords: indium selenide, indium oxide, pulsed laser deposition, III-VI semiconductor