Characterization of electrical contact for wurtzite GaN mircrodisks
Cheng-Da Tsai1*, Ikai Lo1, Ying-Chieh Wang1, Yu-Chi Hsu1, Cheng-Hung Shih1, Wen-Yuan Pang1, Shuo-Ting You1, Chia-Hsuan Hu1, Mitch, M. C. Chou2, Chen-Chi Yang1, Yu-Chiao Lin1
1Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan
2Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan
* presenting author:蔡承達, email:d002030010@student.nsysu.edu.tw
We developed a back processing to fabricate a secure electrical contact of wurtzite GaN microdisk on a transparent p-type GaN template with the orientation, [101 ̅0]disk // [101 ̅0]template. GaN microdisks were grown on LiAlO2 substrate by using plasma-assisted molecular beam epitaxy [1]. From the I-V measurements performed on the samples, we obtained a threshold voltage of ~5.9 V for the current passing through the GaN microdisks with a resistance of ~45 K. In the further study, we analyzed the TEM specimen of a sample with annealed GaN microdisk/p-typed GaN template by selection area diffraction (SAD) to confirm the alignment of the microdisks with the template at the interface. The electrical contact can be applied to the nanometer-scaled GaN light-emitting diode.
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[1] I. Lo, et at., Appl. Phys. Lett, 105, 082101 (2014).


Keywords: I. Lo, et at., Appl. Phys. Lett, 105, 082101 (2014).