Reduction dynamics of scanning probe lithography induced defects on graphene
Hung-Chieh Tsai2,1*, Hung-Wei Shiu3, Min-Chiang Chuang1, Wei-Huan Chiang1, Chia-Hao Chen3, Hsiao-Mei Chien1, Sheng-Wei Lee4, Jonathon David White5, Wei Yen Woon1
1Department of Physics, National Central University, Jungli, Taiwan
2Joint Science Program, College of Science, National Central University, Jungli, Taiwan
3National Synchrotron Radiation Research Center (NSRRC), Hsinchu, Taiwan
4Institute of Material Science and Engineering, National Central University, Jungli, Taiwan
5Dept. of Photonics Engineering, Yuan Ze University, Taoyuan, Taiwan
* presenting author:蔡宏傑, email:tsai092281@gmail.com
We investigate the reduction dynamics of micron-sized defect on chemical vapor deposition grown (CVD) graphene through scanning probe lithography (SPL). By in-situ measuring the chemical profile of the x-ray irradiated SPL defects, the evolution of each associated carbon-oxygen bond strength is resolved by scanning photoelectron microscopy (SPEM) and x-ray photoelectron spectra (XPS). Micro-Raman spectroscopy acquired before and after the reduction process revealed the structural evolution. We have identified the characteristic time for each bond dissociation/creation process involved during reduction, using a coupled non-linear logistic equation.


Keywords: graphene, defects, scanning probe lithography, Raman spectroscopy, photoelectron spectroscopy