Atomic Visualization of Impurities Effect on Giant Rashba Semiconductor BiTeI
Chih-Chuan Su1*, Che-An Liu1, Pei-Faung Chung1, Raman Sankar2, Fang-Cheng Chou2,3,4, Tien-Ming Chuang1
1Institute of Physics, Academia Sinica, Taipei, Taiwan
2Center for Condensed Matter Sciences, National Taiwan University, Taipei, Taiwan
3National Synchrotron Radiation Research Center, Hsinchu, Taiwan
4Taiwan Consortium of Emergent Crystalline Materials, National Science Council, Taipei, Taiwan
* presenting author:Chih-Chuan Su, email:ccsuphys@phys.sinica.edu.tw
Noncentrosymmetic semiconductor BiTeI shows giant Rashba effect, due to strong spin-orbitle interaction. Angle-resolved photoemission spectroscopy and scanning tunneling microscope (STM) measurements also identified two kinds of polar surfaces in BiTeI, exhibiting n-type and p-type semiconducting state for Te- and I-terminated surface, respectively. It is of great interest to exploit these properties for future spintronics applications, particularly how electronic structures evolve when non-magnetic and magnetic impurities are introduced. Here, we use spectroscopic imaging STM to study BiTeI with various impurities. We will report the impact on electronic structures from different impurities both in real-space and momentum-space.


Keywords: Rashba Effect, BiTeI, Scanning Tunneling Microscopy, Spectroscopic Imaging Scanning Tunneling Microscopy, Strongly Correlated Electrons