Synthesis and Thermoelectric Properties of a Single InSb Nanowire
Wei-Han Tsai1*, Chia-Hua Chien1, Yi-Cheng Huang1, Pai-Chun Wei1, Ping-Chung Lee1, Yang-Yuan Chen1
1Institute of Physics, Academia Sinica, Taipei, Taiwan
* presenting author:蔡瑋瀚, email:ham0444@gmail.com
We report InSb single crystal nanowire (NW). The InSb NWs were synthesized by PVD (physical vapor deposition) method.with diameter in range 100 to 300 nm and the length up to 20 μm. Transmission electron microscopy (TEM) study shows that InSb NW grown by the technique were highly Single-Crystalline. The Energy Dispersive X-Ray (EDX) data were obtained for a number of nanowires, showing an atomic ratio of In:Sb about 1:1. A InSb nanowire was suspended on Si₃N₄/Si platform. The thermoelectric property measurements of Seebeck coefficient and electric resistivity were investigated in this report.


Keywords: nanowire, thermoelectric, seebeck