Study chemical vapor deposition graphene and Graphene nucleation density on copper oxide
Min Chiang Chuang1*, Wei Yen Woon1
1Department of physic, Nation Central University, Jhongli city, Taiwan
* presenting author:莊敏強, email:broodworld@gmail.com
Graphene is a two dimension carbon lattice. Due to its special electronic structure, graphene has high mobility and consider as the next generation material of semiconductor industry. From the industry point of view, the issue is how to produce high quality graphene. Chemical vapor deposition (CVD) is a promise way to fabricate wafer scale graphene. However, CVD graphene is defective as compared to mechanically exfoliation graphene. During CVD process, nucleation cites growth to islands and coalesces to polycrystalline graphene. The graphene quality is highly depends on the grain boundary, which is the result islands number. Recently, Rouff discovered that oxygen (O) on the Cu surface substantially decreased the graphene nucleation density by passivating Cu surface active sites. Since that copper oxide is a new way to produce high quality graphene.
In this report, we study synthesis temperature graphene crystal sizes in CVD process on copper oxide. The nucleation and growth model offers us a chance to realize the details lying under the CVD process. We provide the activation energy of nucleation and size growth. We attribute the energy shift due to the effect of oxygen, which is consistent with the increase of the growth speed. The graphene island shape changes from dendrite to compact related to the competition of edge diffusion and surface diffusion. We also study the growth speed on copper oxide by the JMAK model.


Keywords: CVD , graphene, nucleation and growth