Emergent graphene for interconnect applications
C.H. Liu1*, C.S. Wu1, Y.W. Su2, H.Y. Lin3, C.D. Chen4
1Department of physics, National Chang-Hua University of Education, Chang Hua, Taiwan
2National Nano Device Laboratories, Hsin-Chu, Taiwan
3Department of Materials Science, National University of Tainan, Tainan, Taiwan
4Institute of Physics, Academia Sinica, Taipei, Taiwan
* presenting author:劉智華, email:chihhualiu@hotmail.com
In this study, we propose and demonstrate electroplating of Cu on graphene seed layer. Graphene will be not only as the seed layer but also be the diffusion barrier, which combines with copper electroplating. Graphene with its longer queue-time than copper seed layer will avoid surface oxidation. The results indicate that graphene will reduce total resistance and enhance reliability for the application of interconnect.

Keywords: Graphene, seed layer, diffusion barrier, copper electroplating, interconnect