One-step Synthesis of All Carbon Devices by a Large-scale graphitization of Patterned Graphene on Insulators via Cu Vapor-assisted Annealing
Yu-Ze Chen1*, Henry Medina1, Hung-Wei Tsai1, Teng-Yu Su1, Hung-Chiao Lin1, Yu-Lun Chueh1
1Material Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan
* presenting author:陳雨澤, email:kinorassic@gmail.com
Graphene, due to its particular properties such as high chemical stability, superior mechanical strength, low resistivity, and high optical transparency, has been regarded as a potential material in the next generation of electronics. Among all the developed techniques to synthesize graphene, chemical vapor deposition of graphene has been the conventional method to synthesize graphene for multiple applications due to its ability to grow in large scale. However, the problems related to the manual transfer process such as wrinkles, cleanness, and scratches, have limited its use at industrial scale. A variety of researches are eager to develop alternative synthesis methods to directly deposit graphene on insulators at low cost with high uniformity and large area. In this work, we demonstrated a new concept to realize the growth of graphene on non-metal substrates directly. By exposing to Cu vapor during annealing at 860 ˚C, amorphous carbon (a-C) layer undergoes a noticeable transformation to crystalline graphitic carbon and graphene. Furthermore, the thickness of resulting graphene could be controlled depending on the thickness of a-C layer. This approach enables one-step process to fabricate electrical devices made of carbon material. The concept of all carbon devices would pave a new way for developing graphene electronic devices.


Keywords: Graphitization, Graphene, Insulators