Improvement of crystal quality of M-plane InGaN/GaN quantum wells grown on tilt-cut LiAlO₂ by PAMBE for different growth temperatures
Wei-Xiang Zhang1*, Ikai Lo1, Yu-Chiao Lin1, Ming-Chi Chou2
1Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan
2Department of Materials and Optoelectronic Science, National Sun Yat-sen University, Kaohsiung, Taiwan
* presenting author:張惟翔, email:madao510013@gmail.com
In this work, a series of samples were grown at different growth temperatures, we analyzed the characteristics of M-plane InGaN/GaN quantum wells which were grown on tilt-cut LiAlO₂ (LAO) substrate by plasma-assisted molecular beam epitaxy (PAMBE). The LAO substrate was cut with the angle of 11 degree to in-plane. In the X-ray diffraction analysis of M-plane [1-100] InGaN/GaN quantum wells, we found that the crystal quality was improved for the sample with higher growth temperatures. The surface morphology and optical property of GaN samples were characterized by scanning electron microscope (SEM) and photoluminescence (PL) measurements, as well.


Keywords: M-plane, quantum wells