Controlled Segregation of Graphitic Carbon Through Metals By Laser annealing for Few Layer Graphene Deposition onto Transparent Substrates
Chi-Chih Huang1*, Henry Medina1, Yu-Ze Chen1, Yu-Hsian Huang1, Yu-Lun Chueh1
1Material Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan
* presenting author:黃杞智, email:keithkichi@livemail.tw
Graphene, has shown to have a great potential in applications such as transparent electrodes, strain and gas sensors, and high frequency transistors. Large area graphene has been successfully achieved using high purity metal foil, preferable copper, as a catalyst by chemical vapour deposition. Nevertheless, a series of problems from the transfer process to insulators such as wrinkles, polymer residues and scratches greatly reduce the quality of the graphene film. Recent research shows great interest to develop new ways to synthesize graphene on insulators. However, the amount of defects is still an issue to overcome. In this work, we present a method to simultaneously pattern and synthesize graphene on insulating materials from the transformation of amorphous carbon into graphene by laser irradiation using a thin film metal layer as a catalytic interface layer. The metal layer, followed by a thin layer of amorphous carbon are deposited on the surface of the insulating target substrate. By irradiating the selected areas by the laser, the metal layer is heated and amorphous carbon is diffused and later segregated upon cooling. By controlling the thickness of the metal layer and the power of the laser the diffused carbon atoms are re-crystallized on the top of the insulating substrate. Raman spectra confirm the presence of few layer graphene on the interface between the metal and the insulating substrate. Additionally the low intensity ratio between D and G peaks of the Raman spectra are the evidence of the quality of graphene.


Keywords: graphene, laser