Enhance Magntic Damping by Capping Normal Metal Layer
G.Y. Luo1,2*, C. R. Chang1, M. Belmeguenai3, J. G. Lin2
1Deparment of Physics, National Taiwan University, Taipei, Taiwan
2Center for Condensed Matter Sciences, National Taiwan University, Taipei, Taiwan
3LPMTM (UPR 9001) CNRS, Université Paris 13, Paris, France
* presenting author:駱冠宇, email:mager.guan@gmail.com
We use microstrip line ferromagnetic resonance (MS-FMR) technique to measure the frequency depnedence of microwave absorption linewidth. Magnetization precession is produced with the ferromagnetic resonance (FMR) and spin current is pumped into the nomal metal (NM) layer in the ferromagnatic(FM)/NM bilayer structure. The enhancememt of damping constant in bilayers compared with the FM single layer films is essencial to produce the spin current. It is shown that the damping constant as well as spin voltage of LSMO(20nm)/Pt(5.5nm) is larger than LSMO(20nm), consistent with the spin pumping mechanism.

Keywords: spintronics