Pb-Sn-S Semiconductor-Sensitized Solar Cells
Yen-Chen Zeng (曾彥鈞)1*, Ming-Way Lee(李明威)2
1物理所, 國立中興大學, 台中, Taiwan
2奈米科學所, 國立中興大學, 台中, Taiwan
* presenting author:曾彥鈞, email:vague3213211@gmail.com
We present a new ternary semiconductor sensitizer-Pb-Sn-S-for solar cells. Successive ionic layer adsorption and reaction (SILAR) was employed to prepare PbSnS sensitized nanocrystallite TiO2 photoanodes. After a two-stage SILAR and annealing at 200℃ for 1 h in N2, PbSnS quantum dots were synthesized. The characteristics of these photoanodes, such as surface morphology, optical adsorption and electrical property, were measured with XRD, UV-Vis absorption and I−V curves, respectively. The effects of TiO2 diameter on the photovoltaic performance were also studied. The best cell exhibited a short-circuit current density, open-circuit voltage, fill factor, and power conversion efficiency could reach 2.27 mA/cm2, 0.24 V, 32.10 % and 0.175%, respectively.

Keywords: Pb-Sn-S, quantum dots, Successive ionic layer adsorption and reaction, solar cells