Growth and Characterization of Large Area Mono-Layer High quality Transition Metal Dichalcogenides
Chun-Hao Ma1*, Chao-Hui Yeh1, Heng-Jui Liu2, Ying-Hao Chu2, Po-Wen Chiu1
1Institute of electronics engineering, NTHU, Hsinchu, Taiwan
2Materials science and engineering, NCTU, Hsinchu, Taiwan
* presenting author:馬俊皓, email:dsa35197@gmail.com
Two dimensional (2D) materials have gained a great deal of attention with features of ultrathin thickness, transparency and superior transport properties.
Transition metal dichalcogenides (TMDCs) as layered materials, with wide range of electronic, optical, chemical and thermal properties, attracted tremendous attention. However, using conventional processes can only get small grain size with defects issues at grain boundaries, which are the main problems while fabricating FETs based devices. As a result, how to get large-scale and well controlled high quality monolayer TMDCs is a focal issue in this field.
Here, we are going to present a advanced growth technique to fabricate large-scale high quality TMDCs. Using ultra-thin epitaxial transition metal oxide films as reactants, a chalcogens replaceing reaction take place and transforming the films into TMDCs, without messing up the arrangement of atoms, eventually get high quality monolayer TMDCs. Several advantages can be derived by using such a process. First, we can grow epitaxial films in wafer scale, suggesting manufacture of wafer-scale high quality TMDCs is possible. Second, this process can be used to discover new TMDCs. High quality TMDCs can supply fundamental studies in new physics. Last but not least, we can manufacture different TMDCs heterostructures by growing different transition metal oxide as nanostructure or superlattices. Designed heterostructures can be used in light-emitting diodes, diode laser, solar cell and high-speed transistors. Furthermore, new physics can be studied via new heterojunctions.


Keywords: Transition metal dichalcogenides, Two diemesional materials