Estimation of effective carrier concentrations for systems of 2D electron gas and graphene structure Jing-Ying Lin ^{1*}, Feng-Chuan Chung^{1}, Yan-Ten Lu^{2}^{1}Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan^{2}Department of Physics, National Cheng Kung University, Tainan, Taiwan* presenting author:林京萾, email:ginin94@gmail.com In a recent report[1], the conductivity of a system depend on its effective carrier concentration:
n_eff= ∫_0^∞▒〖g(ϵ) f(ϵ)dϵ〗 Where g(ϵ) is the density of states, and f(ϵ) is the Fermi-Dirac distribution function. In this report, we will present our calculation for the system of 2-dim electron gas, and for the linear band structure of graphene. The effective carrier concentrations are shown as a function of both doped carrier concentration and temperature. [1] Vilius Palenskis, World Journal of Condensed Matter Physics, 2014, 4, 123-133 Keywords: density of state, effective carrier density, 2DEG, graphene |