Epitaxial Growth of Multi-layer Graphene over Polycrystalline Cu Foil by Atmospheric Pressure Chemical Vapor Deposition
Kuan-Wei Chu1*, Zong-Ying Wu1, Ching-Wen Chang1, Li-Wei Tu1
1Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan
* presenting author:朱冠瑋, email:mangochu81806@hotmail.com
Graphene is an allotrope of carbon which built from monolayer sp²-bonded carbon atoms as a honeycomb crystal lattice. Since graphene was reported in 2004 from University of Manchester K. S. Novoselov and A. K. Geim, it has been attracting increasing interest because of its unique physical properties, such as quantum Hall effect at room temperature, high mobility, high transmittance, low resistance and so on.
In this report, graphene is prepared with two different substrates in hydrogen atmosphere by APCVD. For obtaining the flat copper surface to grow graphene, copper sheets or templates are etched and polished in high temperature hydrogen atmosphere. For transfer graphene has different methods with regard to different substrates. Polycrystalline Cu foil, graphene can be directly fsh up as long as etch polycrystalline Cu foil. The graphene film area all can get 1 cm² by using two graphene transfer methods.
We choose the epitaxial growth of graphene over polycrystalline Cu foil by APCVD and transfer graphene on n-type silicon semiconductor to fabricate very simple graphene and n-type silicon semiconductor Schottky junction solar cell, in AM1.5G one sun the Voc is about 0.25 V and energy conversion efficiency is about 0.056 %.
Final, We directly grow graphene on c-sapphire and choose the Raman spectrometer to estimate number of layers. According to Raman spectrometer, the 2D band and G band intensity ratio, 2D band FWHM and 2D band symmetry is all conform AA stacking bilayer graphene, so we successfully growth bilayer graphene on c-sapphire.


Keywords: Graphene, CVD, Schottky junction solar cell