Gate controlled spin-orbit interaction in InGaAs/InAs heterostructure
Che-Wei Chang1*, Chin-Hung Chen1, Ju-Chun Fan1, G.Creeth2, I. Farrer2, D.A. Ritchie2, T.-M. Chen1
1Department of Physics, National Cheng Kung University, Tainan 701, Taiwan
2Cavendish Laboratory, J J Thomson Avenue, Cambridge CB3 0HE, United Kingdom
* presenting author:張哲維, email:C24006054@mail.ncku.edu.tw
The current semiconductor scaling technology is expected to end in the next decade. It is urgent to develop a new scheme of semiconductor device. Spin, an intrinsic quantum property, plays a key role in the next-generation semiconductor device. In order to be compatible with the well-developed silicon industry, all-electrical control of spin in semiconductor systems is highly required. The Rashba spin-orbit interaction[1] (SOI) links the electron spin with the controllable electric field, thereby promising a way of all-electric control of spin. We performed the transverse magnetic focusing[2] experiment on InGaAs, which has strong SOI, and succeeded in spatially resolving the spin-up and spin-down electrons. Additionally, the magnetoresistance showing weak anti-localization[3][4] behavior was measured to further confirm the results from the focusing measurements.


Keywords: spin-orbit interaction, magnetic focusing, weak antilocalization, InGaAs/InAs